technical data npn silicon low power transistor qualified per mil - prf - 19500/313 devices qualified level 2n2432 2n2432a jan jantx jantxv maximum ratings ratings symbol 2n2432 2n2432a unit collector - emitter voltage v ceo 30 45 vdc collecto r - base voltage v cbo 30 45 vdc emitter - collector voltage v eco 15 18 vdc collector current i c 100 madc total power dissipation @ t a = +25 0 c (1) @ t c = +25 0 c (2) p t 300 600 mw mw operating & storage junction t emp. range t stg t j - 65 to +200 - 65 to +175 0 c 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 0.25 mw/ 0 c 1) derate linearly 2.0 mw/ 0 c above t a > +25 0 c 2) derate linearly 4.0 mw/ 0 c above t c > +2 5 0 c to - 18* (to - 206aa) *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics emitter - collector breakdown voltage i e = 100 m adc, i b = 0 2 n2432 2n2432a i e = 10 madc, i b = 0 both v (br) eco 15 18 10 vdc collector - emitter breakdown current i c = 10 madc 2n2432 2n2432a v (br) ceo 30 45 vdc collector - emitter cutoff current v cb = 25 vdc 2n2432 v cb = 40 vdc 2n2432a i ces 10 10 h adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n2432 , 2n2432a jan series electrical characteristics (con?t) characteristics symbol min. max. unit off characteristics (con?t) collector - emitter cutoff current v cb = 30 vdc 2n2432 v cb = 25 vdc 2n2432 v cb = 40 vdc 2n2432a v cb = 45 vdc 2n2432a i cbo 100 10 100 10 m adc h adc m adc h adc emitter - collector cutoff current v ec = 1 5 vdc , v bc = 0 vdc i ecs 2.0 h adc emitter - base cutoff current v eb = 15 vdc i ebo 2.0 h adc on characteristics (1) forward - current transfer ratio i c = 10 m adc, v ce = 5.0 vdc i c = 1.0 madc, v ce = 5.0 vdc h fe 30 80 400 forward - current transfer ratio (inverted connection) i c = 0.2 madc, v ce = 5.0 vdc 2n2432 2n2432a h fe(inv) 2.0 3.0 collector - emitter saturation voltage i c = 10 vdc, i b = 0.5 madc v ce(sat) 0.15 mvdc emitter - collector offset voltage i e = 0 madc, i b = 200 m adc 2n2432 2n2432a i e = 0 madc, i b = 1.0 madc 2n2432 2n2432a v ec(ofs) 0.5 0.4 0.1 0.7 mvdc dynamic characteristics forward current transfer ratio i c = 1.0 madc, v ce = 5.0 vdc, f = 20 mhz ? h fe ? 2.0 10 output capacitance v cb = 0 vd c, i e = 0, 100 khz f 1.0 mhz c obo 12 pf input capacitance v eb = 0 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 12 pf (1) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fa x: (978) 689 - 0803 120101 page 2 of 2
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